Dr. Kambiz Alavi

Office Tel. No.: (817) 272-5633
Lab Tel. No.: (817) 272-3873

E-Mail Address: alavi@uta.edu


http://www-ee.uta.edu/online/alavi/ee2303/fall09

Professor and Associate Chairman

Ph.D. Massachusetts Institute of Technology 1981
M.S. Massachusetts Institute of Technology 1977
B.S. Massachusetts Institute of Technology 1972

Courses (Fall 2009)

Electronics I (EE 2303), Circuit Analysis Lab (EE 2440)

Areas of Expertise

Molecular Beam Epitaxy (MBE) of Compound Semiconductors, physics and applications of heterostructures, multiple quantum wells and superlattices for optoelectronic and electronic devices, magneto-optics; nonlinear optics. Research activities at UTA includes: low temperature grown GaAs (LTG-GaAs), chirped superlattices for MQW waveguide and transverse electroabsorption modulators, superlattice and asymmetric quantum well for infrared detectors, vertical cavity surface emitting lasers (VCSL) incorporating novel guided mode resonant mirrors, and lateral selective oxidation of MBE heterostructures for development of lattice-matched insulators in the III-V compounds.

Background

Kambiz Alavi received his undergraduate and graduate education in Physics at M.I.T. (Ph.D. 1981). He joined the Solid State Electronics Research Laboratory at Bell Laboratories in Murray Hill, NJ in 1981. There he collaborated in pioneering research in molecular beam epitaxy of (In, Al, Ga)As heterostructures for optoelectronic and electron devices including novel transistors, MQW lasers and graded bandgap MQW APDs. In 1983 he joined Siemens Research and Technology Laboratories in Princeton, NJ to establish a new MBE Laboratory for optoelectronic and electron device R&D. He joined UTA Electrical Engineering Dept. in August 1988 as an Associate professor. He has established and conducted interdisciplinary research in MBE materials growth, fabrication, and characterization of optoelectronic and electron devices in collaboration with industry and faculty within UTA and other universities. He has developed several graduate courses on these subjects. Dr. Alavi was promoted to full professor in 1994 and received the UTA College of Engineering "Haliburton Excellence in Research Award" in 1996. In summer of 1997 he was awarded an NSF University/Industry Research Fellowship at Texas Instruments, were he participated in MBE growth and characterization of InGaP/InGaAs/GaAs/AlGaAs structures for the development of high efficiency pseudomorphic high electron mobility transistors (PHEMT). Dr. Alavi has been a senior member of IEEE since 1988, is a member of NSF Industry/University Cooperative Research Center for Electronic Materials, Devices, and Systems (CEMDAS) (a joint center of UTA and Texas A&M University) and a member of Metroplex Research Consortium for Electronic Devices and Materials.