Dr. Nikolai Stelmakh
Office: 509 NH
Office Tel. No.: (817) 272-5176
Lab Tel. No. : (817) 272-5629
Email Address: nikolais@uta.edu
nikolais@uta.edu
WebPage:
http://www.uta.edu/faculty/nstelmakh/
Senior Lecturer
Ph.D. Ioffe Physico-Technical Institute, St-Petersburg, Russia, 1989
M.S. Ioffe Physico-Technical Institute, St-Petersburg, Russia, 1984
Areas of Expertise
High power pulsed semiconductor lasers, Ultra-fast saturable absorbers, Planar lightwave devices (silica-on-silicon integrated optics), Nano-photonics.
Background
Dr. Nikolai Stelmakh started his technical and scientific career early being a student of Ioffe Physico-Technical Institute of St-Petersburg (Russia). His first work devoted to the inertial property of ions in superionic crystals was published in 1983. In 1985, he joined research laboratory of Nobel Laureate Zh. I. Alferov and developed a semiconductor material with sub-picosecond recovery time of optical absorption and with unusually high capacity of recombination. In 1988, he was awarded by a Silver medal of All Union Technology Exhibition for this work. In 1990, he joined Centre National de la Recherche Scientifique (CNRS, France) as a Research Scientist. During 1990 to 1996 he experimentally demonstrated the injection seeding technique of Q-switched laser diodes (1990), “chirped” mode-locking of diode laser with record 160fs 100W pulses (1992), and Q-switched laser diode array with pulse energy near of 1-microjoule (1996). He had an extensive funding experience in France in defense and commercial areas including prestigious Ultimatech and RNRT programs. In 1998, he produced a series of articles investigating the high recombination capacity of semiconductor materials irradiated by super-heavy ions. Up to 2000, he was a co-leader of RNRT project ASTRE united CNRS, Alcatel and CNET to develop an all optical non-linear filter for noise reduction in telecommunication lines. In 2000, he was promoted to a position of the Director of Research of CNRS and he was awarded by a Blondel medal for his contribution to the development of ultra-fast optical components for telecommunications. In the past 4 years, prior to his association with UTA, he moved in United States and served as the Vice-President of Technology for Applied WDM Inc, a company founded by the pioneer of heterostructure lasers and silicon optical bench technology Dr. Rudolf Kazarinov. He developed a new generation ultra-low-loss AWG multiplexers. He has an extended experience in fabrication of high complexity optical planar circuits at CMOS silicon foundry. Until Sept 2004 he was a Visiting Associate Professor at University of Texas Arlington working on the development of the electro-optic PLC devices and high power PLC laser diodes. He holds 5 patents. Dr. Nikolai Stelmakh has authored and coauthored over 100 technical papers in journals and conference proceedings. He is a Senior Member of IEEE.