CON-FOCAL SPUTTERING with five 2’’ sputter guns
DC and RF Generators
Quartz Crystal Thickness Monitor
Substrate Holder accommodates

*substrates up to 4’‘diameter or less

*continuous motorized rotation (0-20 RPM) with controller

*radiant heating to 850 °C with quartz halogen lamps
SUBSTRATE RF BIAS for PRE-CLEANING
SUBSTRATE RF BIAS during SPUTTER DEPOSITION
Computer Control
Deposition Uniformity: Better than +/- 2.5% over a 4’’ diameter wafer
Base Vacuum: Better than or equal to 5.0×10-8 Torr
Pumpdown to 5×10-7 Torr in 30 minutes or less from clean dry and empty after N2 vent.
Maximum deposition rates for Ti (2 Å/sec) and SiO2 (0.5 Å/sec)