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10/25/2006
Shanghai, China: Paper "Adjacent Device Thermal Effects Modeling and Characterization in Dielectrically Isolated Bipolar Technology" presented by Dr. Ronald L. Carter at the International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)
 
 Md M. Hossain, Daewoo Kim, Abhijit Chaugule, W. Alan Davis, Howard T. Russell, Jr., and Ronald L. Carter, "Adjacent Device Thermal Effects Modeling and Characterization in Dielectrically Isolated Bipolar Technology"

Abstract: "This paper presents a novel procedure for modeling adjacent device heating effects (thermal coupling) of dielectrically isolated bipolar junction transistors. A new thermal model has been developed for the thermal coupling of multiple devices in an integrated circuit. It also considers the different spacings between adjacent devices. A proposed measurement technique can be used to find the self-heating thermal resistance and thermal coupling resistance for that circuit. Theory, simulations and measurement results agree with the modeling techniques described in this paper. The circuits have been realized using the Vertical Bipolar Inter-Company (VBIC) model of dielectrically isolated bipolar junction transistors (DIBJT)."