Reliability assessment of Cu/low-k interconnects for future technology nodes.
The success of the current and future microelectronic technology
hinges greatly on the reliable integration of low-k dielectrics
in Cu interconnection structure. EML is trying to identify and
understand the mechanism of reliability failures and also to find a
way to remove the threats. Research in this area includes the study of
electromigration, barrier failure mechanism, and low-k stability.
Also studied is the development of metrology that can detect the
presence of such threats. This research is supported by SRC and
Controlled grain growth of Cu interconnects
This project aims to find a practical way of resolving so called
the "size effect" in the resistivity of Cu interconnects. It
is a common anticipation that the electrical resistivity of Cu
interconnects will be excessively high to be used at nanoscale
nodes. Unlike all the other research groups in this field, we are
taking alternative but practical approach to the problem, that
is to induce grains to grow far beyond their usual limit and thereby
reduces the resistivity. This research is supported by SRC grant.
Design and development of quantum-dot embedded nanocomposite particles for bioimaging
One of the upcoming applications of the quantum-dot is the
bioimaging by utilizing its strong florescence property. In this
we are taking extra steps in making such materials. We are developing
ways to tune the wavelength of the florescence and also to make
them in more efficient manner than the conventional. This research is
jointly conducted with Prof. Han at MAE/UTA and supported by
Choong-Un Kim, Ph.D. Professor & Graduate Advisor
Post-doc: Woong-Ho Bang, PhD.
D. M. Meng (Ph. D.)
S. Chen (Ph. D.)
J. Y. Kim (Ph. D.)
Facilities and Equipment
Electromigration testing setup (400 DUTs)
4-point bender for solder fatigue and shear strength testing.
Voltammetry metrology setup.
General corrosion testing and galvanic corrosion testing.