Dr. Wiley P. Kirk
Office: ELAB Room 334
Phone: (972) 742-8856
Ph.D. Stony Brook University (SUNY), NY 1970
M.S. Stony Brook University (SUNY), NY 1967
B.A. Washington University, St. Louis, MO 1964
Director, Center for Nanostructure Materials and Quantum Device Fabrication, Texas A&M University, 1990-2002
My research focuses on topics associated with the science and technologies of materials and devices at the nano and mesoscopic scales: viz.
- Growth and design of heterostructures for high-efficiency multi-junction solar cells, quantum electronic devices, semiconductor devices and materials, using molecular-beam epitaxial growth, pulsed-laser-beam epitaxy, and semiconductor processing.
- Work on charge transport and magneto-transport mechanisms in systems such as graphene, Si and III-V channel transistors with high-k gate insulators.
- Precise atomic scale growth and the manufacturing of 3-D structures is another subject under investigation.
- Silicon-on-lattice-matched insulators for three-dimensional stacking of thin-film transistors and radiation tolerance of nanoelectronic and quantum devices.
- Co-integration of CMOS with III-V materials for single-chip, digital-system applications, such as high-speed A/D conversion, communications, radar, and optoelectronics.
- Past and continuing interests include semiconductors in low-dimensional configurations, experimental condensed-matter physics, transport and magnetoconduction in mesoscopic systems, quantum Hall effect, macroscopic quantum effects, magnetic (bulk and surface) phenomena, many-body effects in quantum solids/liquids, and high temperature superconductivity. Related topics included weak localization and Coulomb interactions in 2-D systems.
- III- V Junctions on Silicon Substrates Using BeTe Buffer Layers for Solar Cell Applications, K. Clark, E. Maldonado and W. P. Kirk, J. Appl. Phys. 103, 064516 (2008).
- Effective Mobility of Single-layer Graphene Transistors as a Function of Channel Dimensions, Archana Venugopal, Jack Chan, Xuesong Li, Carl W. Magnuson, Wiley P. Kirk, Luigi Colombo, Rodney S. Ruoff, and Eric M. Vogel, J. Appl. Phys. 109, 104511 (2011).
- Epitaxial Growth of Cd1-xSexTe Thin Films on Si (100) by Molecular Beam Epitaxy Using Lattice Mismatch Graded Structures, F. Z. Amir, K. Clark, E. Maldonado, W. P. Kirk, J. C. Jiang, J. W. Ager III, K. M. Yu and W. Walukiewicz, J. Crystal Growth 310, 108 1–1087 (2008).
- ZnBeTe Buffer Layers for AlGaAs-GaAs Quantum Well Solar Cell Junctions Epitaxially Integrated On Silicon, K. Clark, E. Maldonado, R. T. Bate, and W. P. Kirk, IEEE 4th World Conference on Photovoltaic Energy Conversion, 2, 589 (2006).
- Electronic and Optical Properties of Beryllium Chalcogenide/Silicon Heterostructures, Titus Sandu and W. P. Kirk, Phys. Rev. B 73, 235307 (2006).
- Nonparabolicity Effects in the Bipolar Quantum Well Resonant Tunneling Transistor, K. P. Clark, W. P. Kirk, and A. C. Seabaugh, Phys. Rev. B 55, 7068 (1997).
- Magnetic-Field-Induced Metal-Insulator Transition in Two Dimensions, T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).