Structural Characterization and Chemical Analysis for Nano-Structures and Semiconductors at Nanometer Scale
Guoda Lian, Ph. D.
Texas Instruments Inc.
Nano-technology is a revolution in this generation. The detailed structures of nano-structures and atomic arrangement at the interfaces or surfaces are very important for understanding the processing, fabrication, properties, and application of these materials.
Analytical electron microscopy techniques, including conventional transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM), as well as electron energy loss spectroscopy (EELS) and energy dispersive spectroscopy (EDS) have been widely applied to characterize nanostructures and semiconductor devices at atomic scale. HRTEM can be used to determine the atomic coordinates of crystalline interfaces. EDS and EELS can be performed on any surfaces or interfaces to provide the chemical information such as composition and bonding. The spatial resolution of EDS is limited by beam broaden effect to around 1~2nm. Electron energy loss near edge fine structure (ELNES) offers a fingerprint of local boundary arrangements, also insight into chemical bonding of the interfaces. In this talk, several examples have been selected to demonstrate the power of the combination of AEM techniques. Also the structural details were also correlated to the processing and properties of the nano-structures and devices.