Table of Contents
Electronics I EE 2303/602 - Summer ‘01 Lectures 04, ...
Silicon Covalent Bond (2D Repr)
Si Energy Band Structure at 0 K
Si Bond Model Above Zero Kelvin
Band Model for thermal carriers
Donor: cond. electr. due to phosphorous
Band Model for donor electrons
Acceptor: Hole due to boron
Classes of semiconductors
Equilibrium concentrations
Carrier Mobility
Exp. mobility model for P, As and B in Si
Drift Current
Drift current resistance
Drift current resistance (cont.)
Net silicon (ex- trinsic) resistivity
Net silicon extr resistivity (cont.)
Semiconductor Equilibrium Conditions
Example calculations
Diffusion of Carriers (cont.)
Total current density
Induced E-field in the D.R.
Depletion approx. charge distribution
Soln to Poisson’s Eq in the D.R.
Comments on the Ex and Vbi
Effect of V > 0
Effect of V > 0
One-sided p+n or n+p jctns
Junction Capacitance
Junction C (cont.)
PPT Slide
Depletion Capacitance
Junction C (cont.)
Junction C (cont.)
Practical Junctions
Law of the junction (injection of minority carr.)
PPT Slide
Ideal diode equation
PPT Slide
Diffnt’l, one-sided diode cond. (cont.)
PPT Slide
PPT Slide
Cap. of a (1-sided) short diode (cont.)
Diode equivalent circuit (small sig)
Small-signal eq circuit
Diode Switching
Diode switching (cont.)
Diode charge for t < 0
Diode charge for t >>> 0 (long times)
Equation summary
Snapshot for t barely > 0
I(t) for diode switching
Reverse bias junction breakdown
PPT Slide
PPT Slide
BV for reverse breakdown (M&K**)
References
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Author: Dr. Ronald L. Carter
Email: ronc@uta.edu
Home Page: http://www.uta.edu/ronc
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