Table of Contents
EE 2303/001 - Electronics I Summer 2001 Lecture 15
n-channel enhancement MOSFET in ohmic region
Conductance of inverted channel
Basic I-V relation for MOS channel
I-V relation for n-MOS (ohmic reg)
Universal drain characteristic
Characterizing the n-ch MOSFET
Low field ohmic characteristics
MOSFET circuit parameters
MOSFET circuit parameters (cont)
Substrate bias effect on VT (body-effect)
Body effect data
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Author: Dr. Ronald L. Carter
Email: ronc@uta.edu
Home Page: http://www.uta.edu/ronc
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