This system is designed for measurements of current-voltage and capacitance-voltage characteristics at 1 MHz. The capacitance meter allows to measure capacitance as function of time which is important for characterization of deep traps in semiconductors. Together with the temperature dependent measurements one can perform deep level transient spectroscopy which allows for the characterization of defects, identification of trap activation energy, capture cross section, and concentration of defects. In our laboratory this technique is currently under development.
Fully-automated with switching controller for current-voltage and capacitance-voltage scans
Shielded micromanipulator probe station for ultra low-noise measurements
Signatone shielded probe station with temperature-controlled chuck for high temperature scans
Vacuum chuck probe station for low-temperature measurements