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AJA ATC ORION Series UHV Sputtering System

The ATC ORION 5 UHV Sputtering system is used to deposit thin films of a material onto a surface (a.k.a. "substrate"). By first creating a gaseous plasma and then accelerating the ions from this plasma into some source material (a.k.a. "target"), the source material is eroded by the arriving ions via energy transfer and is ejected in the form of neutral particles - either individual atoms, clusters of atoms or molecules. As these neutral particles are ejected they will travel in a straight line unless they come into contact with something - other particles or a nearby surface. If a "substrate" such as a Si wafer is placed in the path of these ejected particles it will be coated by a thin film of the source material.

The ATC ORION 5 UHV uses a technique called Magnetron Sputtering. The use of Magnetron Sputtering deals with two problematic issues simultaneously: slow deposition rate and the extensive electron bombardment of the substrate, that can cause overheating and structural damage. By using magnets behind a cathode to trap the free electrons in a magnetic field directly above the target surface, these electrons are not free to bombard the substrate to the same extent as with diode sputtering. At the same time the extensive, circuitous path carved by these same electrons when trapped in the magnetic field, enhances their probability of ionizing a neutral gas molecule by several orders of magnitude. This increase in available ions significantly increases the rate at which target material is eroded and subsequently deposited onto the subtrate.

Features


CON-FOCAL SPUTTERING with five 2’’ sputter guns

DC and RF Generators

Quartz Crystal Thickness Monitor

Substrate Holder accommodates

*substrates up to 4’‘diameter or less

*continuous motorized rotation (0-20 RPM) with controller

*radiant heating to 850 °C with quartz halogen lamps

SUBSTRATE RF BIAS for PRE-CLEANING

SUBSTRATE RF BIAS during SPUTTER DEPOSITION

Computer Control

Deposition Uniformity: Better than +/- 2.5% over a 4’’ diameter wafer

Base Vacuum: Better than or equal to 5.0×10-8 Torr

Pumpdown to 5×10-7 Torr in 30 minutes or less from clean dry and empty after N2 vent.

Maximum deposition rates for Ti (2 Å/sec) and SiO2 (0.5 Å/sec)