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Professor at Department of Materials Science & Engineering
Arlington, TX 76019, USA
University of California, Berkeley
PhD
Materials Science and Engineering
Seoul National University, Korea
MS
Metallurgical Engineering
Seoul National University, Korea
BS
Metallurgical Engineering
September 2007
Ongoing
Professor
Materials Science and Engineering, University of Texas Arlington
September 2009
August 2012
Graduate Adivsor
Materials Science and Engineering, University of Texas Arlington
August 2003
August 2007
Assoc Prof
Materials Science and Engineering, University of Texas Arlington
August 1996
August 2002
Assist Professor
Materials Science and Engineering, University of Texas Arlington
May 2010
Ongoing
Membership
IEEE
April 2002
Ongoing
Membership
The Materials Society of AIME (TMS)
EXPERTISE
Reliability Physics of Microelectronic Devices: metallization & low-k Thin film physics, atomic diffusion, instability, and quantum phenomena Materials synthesis and characterization, including phase diagram, HRTEM
RELIABILITY PHYSICS AND MATERIALS CHARACTERIZATION
Modern devices, especially microelectronics devices, are prone to failures because they are being subjected to increasingly severe service conditions. Failure mechanisms in these microelectronic devices may be analysed using various characterization tools, including transmission and scanning electron microscopy. The failure mechanism and its relationship to the materials should be identified in order to prevent the failure. Research in this area includes the study of electromigration failure at via, deformation defects in metallization layer, and degradation of inter-dielectric materials, as well as studies on the reliability of packaging system wher solder joints are the essential part of the assembly.
Synthesis of Semiconductor Nano-dots
Objective: Design and develop functional materials with high-density semiconductor nano-dots Strategic Areas: Interconnect technology and Characterization method in nanoscale Potential Collaborators A. Weiss: physics A. Koyman: Physics R. Elsenbaumer: Chemistry W. Kirk: EE Description: Interconnect materials used microelectronics devices are nothing but nano (Cu, dielectric, lithography). Better understanding of physics, reliability, and processing is needed. Structural, electrical, and chemical characterization of nano material is challenging issue. Microscopy and spectroscopic technique will be pursued.
THIN FILM METALLURGY
A metalluragical understanding of thin film properties is our primary research concern here at UTA. We are attempting to examine the mechanisms that govern the behaviors of thin film materials by extending the conventional principles of metallurgy, namely phase transformation and thermodynamics. Currently two subjects are under investigation: electromigration in Cu and Al thin film conductors and contact formations between metals and semiconductors. Electromigration, i.e. diffusion impelled by high density currents, has been identified as one of the major sources for device failure. Our main interest in this area is to understand the influence of microstructural features on the electromigration mechanism, in particular, the effect of solute addition on the solvent electromigration. The main objective of the investigation on the contact information is to develop contact materials and processes that produce reliable contacts to semiconductor devices without any parasitic effect. Currently, we are focusing on the contact materials with duplex phases, i.e. semiconductor and metal phases. Experimental and theoretical studies are concurrently carried out to understand the mechanism and kinetics of phase transformations, interface reactions, and diffusion.
2013
H. Xu, C.-U. Kim, and T. K. Lee, "Isothermal Shear Fatigue Mechanism of Lead Free Solder Joints", 60th ECTC, pp1299-1303
Conference Proceeding
Published
2013
E. Zin, W. H. Bang, E. T. Ryan, S. King, and C. -U. Kim, "Study of Viscoplastic Deformation in Porous Organosilicate Thin Films for Ultra Low-k Applications", Appl. Phys. Lett. 102, 221909 (2013) 
Journal Article
Published
2012
J. S. Gandhi, C.-U. Kim,  and W. P. Kirk, "Misfit Management for Reduced Dislocation Formation in Epitaxial Quantum-Dot-Based Devices", J. of Crystal Growth (accepted)  
Journal Article
In-press
2012
J. S. G., C.U. Kim, W. P. Kirk, "Observations of Lattice Strain Decay Mechanisms in the Quantum-Dot Region of Epitaxially Grown p-i-n Photovoltaic Structures", JVST-B
Journal Article
Under Review
2012
H. Xu, C.-U. Kim, and T.-K. Lee, "Sensitivity of Grain Structure and Fatigue Reliability of Pb-Free Solder Jointon the Position in PBGA Packaging Assembly", 60th ECTC, pp 500-504
Conference Proceeding
Published
2012
H. Xu, C.-U. Kim, T. K. Lee, ""Isothermal Shear Fatigue Mechanism of Lead Free Solder Joints", 60th ECTC, pp1299-1303 (2012).
Conference Proceeding
Published
2011
C.U. Kim, L.-S. Chen, N. Michael, W. H. Bang, J.-Y. Park, T. E. Ryan, and S. King, "Development of Voltammetry-based techniques for characterization of porous low-k/Cu interconnect integration reliability", ECS Trans. Vol. 35, 757-2011
Journal Article
Published
2011
C. -U. Kim, "Electromigration in thin films and electronic devices", Woodhead Publishing Co, Cambridge, UK, 2011
Book
Published
2010
Chen, W. H. B.; Kim, Y. J. P. Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects. Applied Physics Letters 2010, 96, 091903.
Journal Article
Published
2010
W. H. B. Xu, T. K. L. Ma, K. C. Liu, and C. U. Kim. "Fracture Mechanics of Lead-Free Solder Joints under Cyclic Shear Load," in 60th Electronic Component Technology Conference (Las Vegas, NV, 2010), pp. 484.
Conference Proceeding
Published
2009
Bedekar, N. P.; Rong, J. P. L.; Kim, C. U.; Priya, S. Improved magnetoelectric properties of piezoelectric–magnetostrictive nanocomposites synthesized using high-pressure compaction technique. Journal Materials Science 2009, 44, 2162-2166.
Journal Article
Published
2009
Bang, C. U. K.; Kang, S. H.; Oh, K. H. Fracture Mechanics of Solder Bumps during Ball Shear Testing: Effect of Bump Size. Journal of Electronic Materials 2009, 38, 1896.
Journal Article
Published
2009
L. S. Chen, Y. J. Park, T. Ryan, S. King, and C. U. Kim. "Cu out-diffusion induced leakage current instability in Cu/porous low-k interconnects," in TECHCON (Texas, Austin, 2009), pp. 12-2.
Conference Proceeding
Published
2009
N. M. Zin, K. H. O. Kang, J. S. C. Chul, T. T. Moon, and C. U. Kim. "Mechanism of Electromigration in Au/Al wirebond and its effects," in 59th Electronic Component Technology Conference (San Diego, 2009), pp. P341.
Conference Proceeding
Published
2009
W. Ho, L. S. C. Bang, T. K. L. Kim, and K. C. Liu. "Rate Dependence of Bending Fatigue Failure Characteristics of Lead-Free solder," in 59th Electronic Component Technology Conference (San Diego, 2009), pp. P561.
Conference Proceeding
Published
2008
R. S. Ray, C. U. K. Bhadrachalam, and S. J. Koh. "CMOS compatible fabrication of room temperature single electron transistor," Nature-Nanotechnology, vol. 3, pp. 603, 2008.
Journal Article
Published
2008
N. L. M. Meng, Y. J. Park, and C. U. Kim. "Analysis of Barrier Defect in Low-k/Cu Interconnects based on Electrochemical Response and Simulation Cell," J. Electron. Mater., vol. 37, pp. 429-438, 2008.
Journal Article
Published
2008
Chen, W. H. B., Kim, S. H. K., & Oh, K. (2008). Mechanism of Thermal Instability of pores in porous low-k dielectrics. In TECHCON (pp. 124). Austin: SRC.
Conference Proceeding
Published
2007
R. S. Ma, V. R. Huang, C. U. Kim, and S. J. Koh. "Electrostatic Funneling for Precise Nanoparticle Placement: A Route to Wafer-Scale Integration," NanoLetters, vol. 7, pp. 439, 2007.
Journal Article
Published
2007
Chen, W. H. B., Michael, Y. J. P., & Matz, C. U. K. (2007). Trapped impurities in low-k dielectrics and their characterization method. In TECHCON (pp. 154). Austin: SRC.
Conference Proceeding
Published
2006
N. M. Meng, C. U. Kim, and Y. J. Park. "Study of Pore Structure and Stability in Porous Low-k Interconnects using Electrolyte Voltammetry," Applied Physics Letters, vol. 88, pp. 261911, 2006.
Journal Article
Published
2005
C. U. K. Shoemaker and M. C. Vogt. "CO2 sensing mechanism of electrocatalytic sensor based on a W-stabilized Bi oxide solid electrolyte and cyclic voltammetry measurement techniques," Sensors and Actuators B, vol. 110, pp. 89-100, 2005.
Journal Article
Published
2004
Michael, C. U. K.; Jiang, R. A.; Gillespie, P. Mechanism of Electromigration failure in submicron Cu interconnects. Journal of Electronic Materials 2004, 31, 1004.
Journal Article
Published
2003
D. P. B. Yildiz, Z. Celik-Butler, and C. U. Kim. "Crystallization and Pyroelectric Effect of Semiconducting YbaCuO Thin Films Deposited at Different Temperatures," J. Vac. Sci. and Technol. B, vol. 1, 2003.
Journal Article
Published
2003
Kim, J. Y. P.; Michael, P. G.; Augur, R. Study of electron scattering mechanism in nanoscale Cu interconnects. Journal of Electronic Materials 2003, 32, 982.
Journal Article
Published
2003
Michael, C. U. K.; Jiang, R. A.; Gillespie, P. Mechanism of electromigration in ultra-fine Cu interconnects. Journal of Electronic Materials 2003, 32, 1.
Journal Article
Published
2003
Park, R. K.; Kim, T. C.; Dunford, S.; Puligandla, V. Influence of Au addition on the phase equilibria of near Eutectic Sn-3.8Ag-0.7Cu Pb-free solder alloys. Journal of Electronic Materials 2003, 32, 1474.
Journal Article
Published
2003
Lee, M. J.; Kim, C. U. Formation of HgTe Nano-disks embedded in PbTe matrix by precipitation phenomena. Nano Letters 2003, 3, 1607.
Journal Article
Published
2003
Park, C. U. K.; Carper, T.; Puligandla, V. Phase equilibrium studies of Sn-Ag-Cu eutectic solders using differential cooling of Sn-3.8Ag-0.7Cu Alloys. Journal of Electronic Materials 2003, 32, 1297.
Journal Article
Published
2002
Aildiz, Z. C. B.; Butler, D. P.; Kim, C. U. The investigation of high temperature coefficient of resistance and crystallization of semiconducting YBaCuO thin films through pulsed laser annealing. Journal of Vacuum Science and Technology 2002, B20, 548.
Journal Article
Published
2002
Le, L. T.; Tso, N. C.; Kim, C. U. An analysis of the reservoir length and its effect on electromigration lifetime. Journal of Materials Research 2002, 17, 167.
Journal Article
Published
2001
Michael, N.; Kim, C. U. Electromigration in Cu thin films with Sn and Al cross strips. Journal of Applied Physics 2001, 90, 4370.
Journal Article
Published
2001
Kim, N. M.; Jiang, Q. T. Efficient electromigration testing with a single current source. Review of Scientific Instruments 2001, 72, 3962.
Journal Article
Published
2001
Kim, C. U. Investigation on self-aligned HgTe nanocrystals induced by controlled precipitation in PbTe-HgTe quasi-binary compound semiconductor alloys. Physic B 2001, 304, 267.
Journal Article
Published
2001
Park, C. W. Y.; Ha, C. U. K.; Kwon, S. B. J.; Kang, C. S. Investigation of interfacial reaction between Sn-Ag eutectic solder and Au/Ni/Cu/Ti thin film metallization. Journal of Electronic Materials 2001, 9, 1165.
Journal Article
Published
1999
Yoon, H. M. L.; Kim, C. U.; Lee, B. J. Investigation of the phase equilibria in the Sn-Bi-In alloy system. Metallurgical Transaction 1999, 30A, 1503.
Journal Article
Published
1998
Le, N. C. T.; Rost, C. K. Influence of W via on the mechanism of electromigration failure in Al-0.5 Cu interconnects. Applied Physics Letters 1998, 72, 2814.
Journal Article
Published
1997
Kim, J. W. M., Jr.; Lee, H. M. The kinetics of electromigration-induced edge drift in Al-Cu thin film interconnects. Journal of Applied Physics 1997, 82, 1592.
Journal Article
Published
1996
Morris, J.; Kim, C. U.; Kang, S. H. The metallurgical control of electromigration failure in narrow conducting lines. Journal of Metals 1996, 48, 43.
Journal Article
Published
1996
Kang, C. U. K.; Morris, J.; Genin, F. Effect of post-patterning annealing on the grain structure and reliability of Al based interconnects. Journal of Applied Physics 1996, 79, 8330.
Journal Article
Published
1996
Kim, S. H. K.; Morris, J. Effect of current reversal on the Failure mechanism of Al-Cu-Si narrow interconnects. Journal of Electronic Materials 1996, 25, 293.
Journal Article
Published
1994
Kim, S. I. S.; Morris, J. The Influence of Microstructure on the Resistivity of Al-Cu-Si Thin Film Interconnects. Journal of Applied Physics 1994, 75, 879.
Journal Article
Published
1993
Kim, U.; Morris, J. The mechanism of electromigration failure of narrow Al-2Cu-1Si thin film interconnects. Journal of Applied Physics 1993, 73, 4885.
Journal Article
Published
1992
Kim, C. U.; Morris, J. "The influence of Cu precipitation on electromigration failure in Al-Cu-Si. Journal of Applied Physics 1992, 72, 1837.
Journal Article
Published
Spring 2015
MSE 5312 - Mechanical Behavior of Materials
Office Hours
DayStartEnd
Tuesday1:00PM2:00PM
Thursday1:00PM2:00PM
This course describes the mechanical properties of materials with weighted emphasis on plasticity and strengthening mechanism.  Also discussed will include the solid state defects and their role in making materials mechanical properties, including plastic deformation and fracture resistance, to be changed.  
Last Updated on March 19, 2015, 3:34 pm
No Documents Attached
Fall 2014
MSE 5304 - Materials Analysis
Office Hours
DayStartEnd
Tuesday1:00PM2:00PM
Thursday1:00PM2:00PM
This course teaches principles behind a number of common characterization techniques of engineering materials
Last Updated on August 26, 2014, 11:12 am
No Documents Attached
Fall 2014
MSE 5339 - Failure analysis and Reliability Engineering
Office Hours
DayStartEnd
Monday3:00PM4:45PM
Wednesday3:00PM3:45PM
This course discusses following subjects: common failure mechanisms in engineering materials including fracture, corrosion and reaction; statistical analysis and modeling of such failure mechanisms.
Last Updated on August 26, 2014, 11:15 am
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Fall 2013
MSE 5304 - Materials Analysis
Office Hours
DayStartEnd
Tuesday1:00PM2:00PM
Thursday1:00PM2:00PM
This course consists of two parts, lecture and laboratory.  The lecture part of the class discusses theories behind materials characterization. The discussion includes the theories behind X-ray diffraction techniques, electron microscopy and spectroscopic techniques, thermal analysis techniques, and opticalspectroscopic techniques.  The laboratory part of class is designed to provide students with hand-on experiences associated with various characterization techniques, including two x-ray diffractometry methods, SEM/EDX/Auger, and optical spectroscopic techniques.     
Last Updated on August 22, 2013, 6:58 pm
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Summer 2013
MSE 5341 - Transmission Electron Microscopy
Understanding of basic principles behind thetransmission electron microscopy and the advanced analysis and gaining thefirst level operation experience. Discussion includes the kinematical and thedynamical diffraction theory as well as other fundamentals for TEM operation.
Last Updated on August 22, 2013, 7:01 pm
No Documents Attached