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Professor at Department of Electrical Engineering
Massachusetts Institute of Technology
Ph.D.
Physics
Massachusetts Institute of Technology
M.S.
Physics
Massachusetts Institute of Technology
B.S.
Physics
January 2008
Ongoing
Professor and Associate Chair
The University of Texas at Arlington
January 2008
Ongoing
Adjunct Professor
UT Southweastern Medical School at Dallas
January 1994
January 2013
Professor
The University of Texas at Arlington
January 2001
January 2003
Department Manager
BAE Systems, NH
January 1988
January 1994
Assoc Prof
The University of Texas at Arlington
January 1983
January 1988
Research Scientist
Siemens Research and Technology Laboratories
January 1981
January 1983
Postdoctoral Member of Technical Staff
AT&T Bell Laboratories
Background and Areas of Expertise
Dr. Kambiz Alavi Office Tel. No.: (817) 272-5633 E-Mail Address: alavi@uta.edu Professor and Associat Chair, Departmernt of Electrical Engineering, UTA Ph.D. Massachusetts Institute of Technology 1981 M.S. Massachusetts Institute of Technology 1977 B.S. Massachusetts Institute of Technology 1972 Areas of Expertise Molecular Beam Epitaxy (MBE) of Compound Semiconductors, physics and applications of heterostructures, multiple quantum wells and superlattices for optoelectronic and electronic devices, magneto-optics; nonlinear optics. Research activities at UTA includes: low temperature grown GaAs (LTG-GaAs), chirped superlattices for MQW waveguide and transverse electroabsorption modulators, superlattice and asymmetric quantum well for infrared detectors, vertical cavity surface emitting lasers (VCSL) incorporating novel guided mode resonant mirrors, and lateral selective oxidation of MBE heterostructures for development of lattice-matched insulators in the III-V compounds. Background Kambiz Alavi received his undergraduate and graduate education in Physics at M.I.T. (Ph.D. 1981). He joined the Solid State Electronics Research Laboratory at Bell Laboratories in Murray Hill, NJ in 1981. There he collaborated in pioneering research in molecular beam epitaxy of (In, Al, Ga)As heterostructures for optoelectronic and electron devices including novel transistors, MQW lasers and graded bandgap MQW APDs. In 1983 he joined Siemens Research and Technology Laboratories in Princeton, NJ to establish a new MBE Laboratory for optoelectronic and electron device R&D. He joined UTA Electrical Engineering Dept. in August 1988 as an Associate professor. He has established and conducted interdisciplinary research in MBE materials growth, fabrication, and characterization of optoelectronic and electron devices in collaboration with industry and faculty within UTA and other universities. He has developed several graduate courses on these subjects. Dr. Alavi was promoted to full professor in 1994 and received the UTA College of Engineering "Haliburton Excellence in Research Award" in 1996. In summer of 1997 he was awarded an NSF University/Industry Research Fellowship at Texas Instruments, were he participated in MBE growth and characterization of InGaP/InGaAs/GaAs/AlGaAs structures for the development of high efficiency pseudomorphic high electron mobility transistors (PHEMT). Dr. Alavi has been a senior member of IEEE since 1988, is a member of NSF Industry/University Cooperative Research Center for Electronic Materials, Devices, and Systems (CEMDAS) (a joint center of UTA and Texas A&M University) and a member of Metroplex Research Consortium for Electronic Devices and Materials. From 2001-2003 he was on leave of absence from UTA and worked at BAE Systems in Nashua NH in Advanced Technology and Systems division as a Department Manger in the Integrated Optoelectronics Group. Returning to UTA, he became a founding member of Advanced Imaging Research Center, a Joint Center with UT Southwestern Medical School in Dallas and UT Dallas. He collaborates with faculty in Bioengineering at UTA in the area Infrared, Near Infrared, and visible high speed imaging to be applied to medical imaging. Currently he is the PI for NSF REU Site: Undergraduate Research Experiences in Sensors and Applicationsis and manges this important research and education activity at UTA.
2006
 “Study of cerebral blood volume and blood flow using integral equation theory”, Monica Allen, Jeffery Allen, Kambiz Alavi, Libertas Mathematica, vol. XXVI Pages: 109-117 2006.
Journal Article
Published
2006
InGaAs/InAlAs Multi-Quantum Well Light Modulator and Detector, P. G. Maloney, F. E. Koch, K. Alavi, J. Pellegrino, T. Hongsmatip, D. Carothers, M. Winn, Proceedings SPIE Optics East 1-4 October 2006.
Conference Proceeding
Published
2005
“Effect of the modulation duty cycle on the amplitude of photoreflectance”Esam Al-Arfaj, R. Glosser, Kambiz Alavi, and E.A. Beam III, Can. J. Phys./Rev. Can. Phys. 83(10): 1029-1034 (2005).
Journal Article
Published
2000
“Photocurrent Study of Low Temperature Grown GaAs”, N. Hozhabri, J. Montoya, and K. Alavi, J. Appl. Phys. vol. 87, no. 5, pp. 2353-2356, 1 March 2000.
Journal Article
Published
1998
“Guided-mode resonant effects in thin-film diffractive optics and their applications”, R. Magnusson, D. Shin, Z. S. Liu, S. Tibuleac, S. J. Kim, P. P. Young, D. Wawro, T. A. Maldonado, and K. Alavi in Optics and Optoelectronics, Vol. 1, pp 228-237 (1998). O. P. Nijhawan, A. K. Gupta, A. K. Musla, and Kehar Singh, Narosa Publishing House, New Dehli, London.  (Invited)
Journal Article
Published
1998
“High Efficiency InGaP Power pHEMTs”, M.-Y Kao, M. N. Tutt, E. A. Beam III, W. R. Frensley, and K. Alavi, in Compound Semiconductor Power Transistors and State of the Art Program on Compound Semiconductors (SOPTAPOCS XXIX), The Electrochemical Society Proceedings Series vol. 98-12, pp. 131-138 (1998).
Conference Proceeding
Published
1997
“Study of deposition dependent characteristics of gold on n-GaAs by photoreflectance spectroscopy,” Ali Badakhshan, Jeff L. England, P. Thompson, P. Cheung, C. H. Yang, Kambiz Alavi, J. Appl. Phys.,v 81 n 2, pp 910-916, Jan 15 1997.
Journal Article
Published
1997
“Energy relaxation of hot electrons in GaAs/AlGaAs superlattices measured by infrared differential spectroscopy”, W. Hilber, M. Helm, K. Alavi, and R. N. Pathak, Superlattices and Microstructures. vol. 21, no.1; pp. 85-90 (1997).
Journal Article
Published
1996
“Impurity Band and Magnetic-Field-Insulator Transition in a Doped GaAs/AlxGa1-xAs Superlattice,” W. Hilber, M. Helm, F. M. Peeters, K. Alavi, and R. N. Pathak, Phys. Rev. B vol. 53, no. 3, pp.6919-6922,15 March 1996.
Journal Article
Published
1996
“Vacancy-Type Defects in Molecular Beam Epitaxy Low Temperature Grown GaAs, a Positron Beam Lifetime Study,” J. Störmer, W. Triftshäuser, N. Hozhabri, and K. Alavi, Appl. Phys. Lett. vol. 69 no. 13, pp. 1867-1869(1996).  
Journal Article
Published
1996
“Hot Electron Power Loss in a Doped GaAs/AlGaAs Superlattice at Intermediate Temperature Studied by Infrared Differential Spectroscopy,” W. Hilber, M. Helm, F. M. Peeters, K. Alavi, and R. N. Pathak, Appl. Phys. Lett. vol. 69, no. 17, pp. 2528-2530, Oct. 21, 1996.
Journal Article
Published
1996
“Magnetic Field Induced Metal-Insulator Transition in GaAs/AlGaAs Quantum Wells and Superlattices,” W. Hilber, M. Helm, W. Hauke, F. M. Peeters, K. Alavi, and R. N. Pathak, 11th Int. Conf. on Phys. Semicond. at High Magn. Fields, 1996-1999 (1995).  
Conference Proceeding
Published
1996
“A Monolithic GaAs Photovoltaic Device Array with a Self-Aligned Dielectric Isolation on Sidewall,” Young-Gi Kim, Alec Chen, Kambiz Alavi, and Tsay-Jiu Shieh, Inst. Phys. Conf. Ser. 145, 1129-1132(1996).
Conference Proceeding
Published
1995
“Molecular Beam Epitaxy,” Kambiz Alavi, in Handbook of Compound Semiconductors, Ch.4, pp. 84-169, P. H. Holloway and G. E. McGuire editors, Noyes Publications, Parkridge, NJ 1995.
Book Chapter
Published
1995
"Defects and Arsenic Distribution in low-temperature-grown GaAs,"  N. Hozhabri, A. R. Koymen, S. C. Sharma, and K. Alavi, Appl. Surf. Sci. vol. 85, pp. 311-314 (1995).
Journal Article
Published
1995
"Infrared Measurements in Annealed Molecular Beam Epitaxy GaAs Grown at Low Temperature," N. Hozhabri, S.-H. Lee, and K. Alavi, Appl. Phys. Lett. vol. 66 no. 19, pp. 2546-2548, 8 May 1995.  Erratum: Appl. Phys. Lett. vo.67, no. 7, p. 1037, (1995).
Journal Article
Published
1994
"Miniband Dispersion, Critical Points, and Impurity Bands in Superlattices: An Infrared Absorption Study," M. Helm, W. Hilber, T. Fromherz, F. M. Peeters, K. Alavi, and R. N. Pathak, Solid State Electron.. vol.37, no.4-6, pp.1277-80; April-June 1994.
Journal Article
Published
1994
"Defects in Molecular Beam Epitaxial GaAs Grown at Low Temperatures," N. Hozhabri, S. C. Sharma, R. N. Pathak, and K. Alavi, J. Electron. Mat. vol. 23, no. 6, pp. 519-523, June 1994.
Journal Article
Published
1994
"Correlation between arsenic percipitates and vacancy-type defects in low temperature-grown GaAs," N. Hozhabri, J. B. Bailey, A. R. Koymen, S. C. Sharma, and K. Alavi, J. Phys. Condens. Matter vol. 6, L455-L460 , Aug. 1, 1994.
Journal Article
Published
1994
"Analysis of Harmonics, Compression, and Intermodulation Distortion in Quadratic Electro-optic Intensity Modulators, " Charles L. Goldsmith, Robert Magnusson, and Kambiz Alavi, IEEE MTT-S Digest  pp. 69-72, 1994.
Conference Proceeding
Published
1993
"Photoreflectance Characterization of GaAs as a Function of Temperature, Carrier Concentration, and Near-Surface Electric Field," Ali Badakhshan, C. Durbin, R. Glosser, Kambiz Alavi, and R. Pathak, J. Vac. Sci. Technol. B vol. 11, no. 2, pp. 169-174, March/April 1993
Journal Article
Published
1993
"Infrared Absorption in Superlattices: A Probe of the Miniband Dispersion and the Structure of the Impurity Band," M. Helm, W. Hilber, T. Fromherz, F. M. Peeters, K. Alavi, and R. N. Pathak, Phys. Rev. B vol. 48, no. 3, pp.1601-1605,15 July 1993.  
Journal Article
Published
1993
"Electroreflectance-Photoreflectance Technique for Studies of Built-in Electric Field in Layered Materials," M. Sydor, Ali Badakhshan, D. A. Dale, K. Alavi, and R. Pathak, Appl. Phys. Lett. vol. 63, no. 4, pp. 527-529, 26 July 1993.
Journal Article
Published
1993
"Chirped Superlattice Asymmetric MQW Electroabsorption Modulators Grown by MBE,"  R. N. Pathak, L. T. Wang, and K. Alavi, Conference on Lasers and Electro-Optics, pp. 374-5, 2-7 May 1993, Baltimore, MD. (CLEO '93).  
Conference Proceeding
Published
1993
"Chirped Superlattice Asymmetric MQW Electroabsorption Modulators Grown by MBE,"  R. N. Pathak, L. T. Wang, and K. Alavi, Conference on Lasers and Electro-Optics, pp. 374-5, 2-7 May 1993, Baltimore, MD. (CLEO '93).  
Conference Proceeding
Published
1992
"Monoenergetic positron beam, positron lifetime, and Hall-effect measurements in III-V epilayers grown at low temperatures by molecular beam epitaxy," N. Hozhabri, R. C. Hyer, S. C. Sharma, J. Y. Ma, R. N. Pathak, and K. Alavi, J. Vacuum Sci. Technol. B  vol. 10, no. 2, p.788-92 March-April 1992. 
Journal Article
Published
1992
"Photoelectrochemical depth profiling of molecular beam epitaxy grown group III-V heterostructures," C. Wei, K. Rajeshwar, K. Alavi, R. N. Pathak, and L. T. Wang, Appl. Phys. Lett. vol. 60, no. 11, p.1348-50, March 1992.
Journal Article
Published
1992
"Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE," R. J. Malik, N. Chand, J. Nagle, R. W. Ryan, K. Alavi, and A. Y. Cho, IEEE Electron Device Lett.  vol. EDL-13, no. 11, pp. 557-9, Nov. 1992.
Journal Article
Published
1992
"Application of differential photoreflectance spectroscopy in selective modulation of a layer within multilayer device structures,"  A. Badakhshan, M. Sydor, K. Alavi, N. Teraguchi, and H. Morkoc, Proceedings of the SPIE vol. 1678, 1992: Spectroscopic Characterization Techniques for Semiconductor Technology IV. Somerset, NJ, USA, 25-26 March 1992.
Conference Proceeding
Published
1992
"Correlation between electric field, temperature and carrier concentration with respect to photoreflectance lineshape at the E1 transition of GaAs," A. Badakhshan, C. Durbin, R. Glosser, K. Alavi, S. Nicholas, D. Dale, and K. Capuder.  Proceedings of the SPIE vol. 1678, pp. 194-202, 1992: Spectroscopic Characterization Techniques for Semiconductor Technology IV. Somerset, NJ, 25-26 March 1992.
Conference Proceeding
Published
1991
"Carrier Concentration Determination by Photoreflectance at E1 in Thin Film, Highly Doped GaAs," Ali Badakhshan, R. Glosser, S. Lambert, Mark Anthony, R. S. Sillmon, P. E. Thompson, and Kambiz Alavi, Appl. Phys. Lett., vol. 59, no. 10, pp. 1218-20, Sept. 1991.
Journal Article
Published
1991
"Optical determination of electric field and carrier concentration in nanometric epitaxial GaAs by photoreflectance," A. Badakhshan, C. Durbin, R. Glosser, K. Alavi, S. Lambert, R. S. Sillmon, P. E. Thompson, K. Capuder, Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium Editor(s): Stringfellow, G.B. Bristol, UK: IOP, 1992. pp. 635-8  Conference: Seattle, WA, 9-12 September 1991.
Conference Proceeding
Published
1991
"Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors," R. J.  Malik, A. Feygenson, D. Ritter, R. A. Hamm, M. B. Panish, J. Nagle, K. Alavi, and A .Y. Cho, International Electron Devices Meeting 1991. Technical Digest 1991. p.805-8, Washington, DC, 8-11 December 1991.
Conference Proceeding
Published
1991
Monoenergetic positron beam, positron lifetime, and Hall-effect measurements in III-V epilayers grown at low temperatures by molecular beam epitaxy," N. Hozhabri, R. C. Hyer, S. C. Sharma, J. Y. Ma, R. N. Pathak, and K. Alavi,  presented at the 11th Molecular-Beam Epitaxy Workshop. Austin, TX, 6-18 September 1991.
Conference Paper
Published
1990
"Simple Batch Processing for Forming High-Reflective Mirrors of Short-Cavity AlGaAs/GaAs Lasers," CC. Shieh, J. Mantz, K. Alavi, and R. Engelmann, Photon. Technol. Lett. vol. 2, no. 3, pp. 159-161, March 1990.
Journal Article
Published
1990
"Determination of Diode Parameters and Threshold Currents from I-V Measurements of InGaAsP/InP DFB DH Lasers," B. Kanack, K. Alavi, A. Appelbaum, and C. L. Jiang, Second International Conference on Indium Phosphoide and related Materials, pp. 255-259, April 23-25, 1990, Denver, CO.
Conference Proceeding
Published
1990
"Molecular beam epitaxy for optoelectronic quantum well devices," K. Alavi, Midcon/90. Conference Record  pp. 400-3  Conference: Dallas, TX, 11-13 September 1990.
Conference Proceeding
Published
1989
"Excited States of the Light- and Heavy-Hole Free Excitons Observed in Photoreflectance," W. M. Theis, G. D. Sanders, C. E. Leak, D. C. Reynolds, Yia-Chung Chang, K. Alavi, C. Colvard, and I. Shidlovsky,  Phys. Rev. B vol. 39, no. 2, pp. 1442-1445, 15 January 1989.(Rapid Communications).
Journal Article
Published
1989
"Localization Dependent Thermalization of Excitons in GaAs/AlGaAs Quantum Wells," C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, and N. Nouri, Phys. Rev. B vol. 39, no. 5, pp. 3419-3422, 15 February 1989.(Rapid Communications).  
Journal Article
Published
1989
"Self-Aligned Index-Guided MQW Laser by Sulfur Diffusion Induced Disordering," C. Shieh, J. Mantz, R. Engelmann, and K. Alavi, Electron. Lett., vol. 25, no. 6, pp. 378-379, 16 March 1989.
Journal Article
Published
1989
"The Cavity Length Dependence of Threshold Current for Quantum Well Lasers, C. Shieh, R. Engelmann, J. Mantz, K. Alavi and C. Shu, Appl. Phys. Lett., vol. 54, no. 12, pp. 1089-1091, 20 March 1989.
Journal Article
Published
1989
"Well Size Related Limitations on Maximum Electroabsorption in GaAs/AlGaAs Multiple Quantum Well Structures," K. Jelley, R. Engelmann, K. Alavi, H. Lee, Appl. Phys. Lett., vol. 55, pp. 70-72, 3 July 1989.
Journal Article
Published
1989
"TE- to TM- Mode Conversion in a GaAs/AlGaAs Superlattice Wave Guide," T. Wolf, C.-L. Shieh, R. Engelmann, K. Alavi, and J. Mantz, Electron. Lett. vol. 25, no. 18, pp. 1221-1223, 31 August 1989.
Journal Article
Published
1989
"Lateral Refractive Index Step in GaAs/AlGaAs Multiple Quantum Well Waveguides Fabricated by Impurity Induced Disordering," T. Wolf, C.-L. Shieh, R. Engelmann, K. Alavi, and J. Mantz, Appl. Phys. Lett. vol. 55, no. 14, pp. 1412-1414, 2 October 1989.
Journal Article
Published
1989
"Bloch and localized electrons in semiconductor superlattices," M. Helm, W. Hilber, T. Fromherz, F. M. Peeters, K. Alavi, and R. N. Pathak, Semicon. Science and Technol. vol.9,no.11S, pp.1989-93; Nov. 1994.
Journal Article
Published
1989
"The Effect of Ar Sputtering on the Disordering of AlGaAs Multiple Quantum Wells (MQW)," C. Shieh, C. Colvard, J. Mantz, K. Alavi, and R. Engelmann, Advances in Materials, Processing and Devices in III-V Compound Semiconductors /symposium, pp. 531-536, 1989.
Conference Proceeding
Published
1989
"Low Threshold Current Ridge Waveguide Etched Facet Short Cavity AlGaAs/GaAs Laser," C. Shieh, J. Mantz, K. Alavi, and R. Engelmann, presented at Conference on Lasers and Electro-Optics, 24-28 April 1989, Baltimore, MD. (CLEO '89).
Conference Proceeding
Published
1989
"Optimum Electroabsorption as a compromise between Exciton Confinement and Line Width Broadening," IEEE/LEOS Topical Meeting on Quantum Wells for Optics and Optoelectronics, K. Jelley, R. Engelmann, K. Alavi, H. Lee, Salt Lake City, Utah, March 6-8, 1989.  Post deadline paper.
Conference Paper
Published
1988
"Study of Impurity Induced Disordering in AlGaAs/GaAs Multi-Quantum Well Structures by Photothermal Deflection Spectroscopy and Photoluminescence," C. Shieh, J. Mantz, C. Colvard, K. Alavi, and R. Engelmann, Z. Smith, and S. Wagner, Superlattices and Microstructures, vol. 4, no. 4/5, pp. 5977-602, 1988.
Journal Article
Published
1988
"Well Resolved Higher Excited States of Light- and Heavy-Hole Free Excitons in a 225Å AlxGa1-xAs-GaAs Multi-Quantum Well Structure," D.C. Reynolds, K. K. Bajaj, C. Leak, G. Peters, W. Theis, P. Yu, K. Alavi, C. Colvard, and I. Shidlovsky, Phys. Rev. B, vol. 37, no. 6, pp. 3117-3119, February 15, 1988.  (Rapid Communications).
Journal Article
Published
1988
"Low Threshold Current Surface Emitting AlGaAs/GaAs Laser with 45o Metallised Reflector," C. L. Shieh, J. Mantz, K. Alavi, and R. W. H. Engelmann, Electron. Lett., vol. 24, no. 6, pp. 343-344, 17 March 1988.
Journal Article
Published
1988
"Photovoltaic Quantum Well Infrared Detector," K. W. Goossen, S. A. Lyon, and K. Alavi, Appl. Phys. Lett., vol. 52, no. 20, pp. 1701-1703, 16 May 1988.
Journal Article
Published
1988
"Grating Enhancement of Quantum Well Detector Response," K. W. Goossen, S. A. Lyon, and K. Alavi, Appl. Phys. Lett., vol. 53, no. 12, pp. 1027-1029, 19 September 1988.
Journal Article
Published
1988
"Deconvolution of the Light- and Heavy-Hole Free Exciton Fine Structure in AlxGa1-xAs-GaAs Multi-Quantum Wells Using Photoluminescence Excitation Spectroscopy," D. C. Reynolds, K. K. Bajaj, G. Peters, D. Look, W. M. Theis, P. W. Yu, H. Morkoc, K. Alavi, C. Colvard, and I. Shidlovsky, Superlattices and Microstructures, vol. 4, no. 6, pp. 723-728 (1988).  
Journal Article
Published
1988
"Experimental Determination of Electroabsorption in GaAs/AlGaAs Multiple Quantum Well Structures as a Function of Well Width," K. W. Jelley, K. Alavi, and R. W. Engelmann, Electron. Lett., vol. 24, no. 25, pp. 1555-1557, 8 December 1988.
Journal Article
Published
1988
"Anomalous Exciton Temperatures in GaAs/A1GaAs Quantum Wells," C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, and N. Nouri, Gallium Arsenide and Related Compounds 1988.  Proceedings of the Fifteenth International Symposium, pp. 261-266, 1989 September 11-14, 1988, Atlanta, GA.
Conference Proceeding
Published
1988
"The Effect of Ar Sputtering on the Disordering of AlGaAs Multiple Quantum Wells (MQW)," C. Shieh, C. Colvard, J. Mantz, K. Alavi, and R. Engelmann, Materials Research Society Fall Meeting, 28 Nov.-2 Dec. 1988. 
Conference Paper
Published
1987
"Molecular Beam Epitaxial Growth of Graded Band-Gap Quaternary GaxAly In1-x-yAs Multilayer Heterostructures on InP: Application to a Novel Avalanche Photodiode with Ultrahigh Ionization Ratio," K. Alavi, A.Y. Cho, F. Capasso, and J. Allam, J. Vac. Sci. Technol. B5, no. 3, pp. 802-807, May/June 1987.
Journal Article
Published
1987
"Near-Single Carrier-Type Multiplication in a Multiple Graded-Well Structure for a Solid-State Photomultiplier," Jeremy Allam, Federico Capasso, Kambiz Alavi, and Alfred Y. Cho  IEEE Electron Device Lett. EDL-8,pp. 4-6,  Jan.  1987.
Journal Article
Published
1987
"Experimental Determination of the Edge Depletion Width of the Two- Dimensional Electron Gas in GaAs/AlxGa1-xAs," K.K. Choi, D.C. Tsui, and K. Alavi, Appl. Phys. Lett., vol. 50, no. 2, pp. 110-112, January 12, 1987.
Journal Article
Published
1987
"Dephasing Time and One-Dimensional Localization of Two-Dimensional Electrons in GaAs/AlxGa1-xAs Heterostructures," K. K. Choi, D. C. Tsui, and K. Alavi, Phys. Rev. B. vol. 36, no. 14, pp. 7751-7754, 15 November 1987 (Rapid Communications).
Journal Article
Published
1987
"Experimental Search for Dynamic Current Oscillations in the Quantum Hall Effect," V.J. Goldman, S.E. Barrett, D.C. Tsui, and K. Alavi, Physics Lett. A., vol. 123, pp. 311-312, 17 August 1987.
Journal Article
Published
1987
"Characteristics of Nonselective GaAs/AlGaAs Heterostructure Etching at Very Low Etch Rates," M. Schneider, C. Colvard, K. Alavi, and E. Kohn, Proceedings of SPIE Conference 797: Advanced Processing of Semiconductor Devices , Bay Point, FL, pp. 149-155, March 22-27, 1987.
Journal Article
Published
1987
"Narrow Recess HEMT Technology," C. J. Wu, M. Schneider, K. Alavi, and E. Kohn, J. Electrochem. Soc., vol. 134, no. 10, pp. 2613-2616, October 1987.
Journal Article
Published
1987
"Conduction Band Offset Determination in GaAs-AlGaAs through Measurement of Infrared Internal Photoemission," K.W. Goossen, S. A. Lyon, and K. Alavi, Phys. Rev. B, vol. 36, no. 17, pp. 9370-9373, December 15, 1987.  (Rapid Communications).
Journal Article
Published
1987
"Study of Impurity Induced Disordering in AlGaAs/GaAs Multi-Quantum Well Structures by Photothermal Deflection Spectroscopy and Photoluminescence," C. Shieh, J. Mantz, C. Colvard, K. Alavi, and R. Engelmann, Z. Smith, and S. Wagner, presented at the Third International Conference on Superlattices, Microstructures, and Microdevices, Chicago, August 17-20, 1987.
Conference Proceeding
Published
1986
"Metastability and Polarization Effects in a pn Heterojunction Device Due to Deep States," Michael Stavola, F. Capasso, J. C. Nabity, K. Alavi, and A. Y. Cho, Appl. Phys. Lett., vol. 48, no. 15, pp. 997-999, April 14, 1986.
Journal Article
Published
1986
"Impact Ionization Across the Band-Edge Discontinuity with Very Large Ionization Rate Ratio in a Superlattice with Graded Wells," J. Allam, F. Capasso, K. Alavi, and A.Y. Cho, Gallium Arsenide and Related Compounds 1986, Proceedings of the Thirteenth International Symposium, pp. 405-10 September 1986, Las Vegas, NV.
Conference Proceeding
Published
1986
"Near-Single Carrier-Type Multiplication in a Multiple Graded-Well Structure for a Solid-State Photomultiplier," Jeremy Allam, Federico Capasso, Kambiz Alavi, and Alfred Y. Cho, presented by J. Allam at International Electron Device Meeting(IEDM86), Los Angeles, CA, December 1986 (pp. 614-617 of Technical Digest), recipient of Best Student Paper Award. 
Conference Proceeding
Published
1985
"Electric Field Dependent Cathodoluminescence of III-V Compound Heterostructures:  A New Interface Characterization Technique," N. Magnea, P. M. Petroff, F. Capasso, R. A. Logan, K. Alavi, and A.Y. Cho; Appl. Phys. Lett., vol. 46, no. 11, pp. 1074-1076, June 1, 1985.
Journal Article
Published
1984
"Interdigitated Al0.48In0.52As/Ga0.47In0.53As Photoconductive Detectors," C.Y. Chen, Y. M. Pang, K. Alavi, A.Y. Cho, P.A. Garbinski; Appl. Phys. Lett., vol. 44, no. 1, pp. 99-101, January 1, 1984.
Journal Article
Published
1984
Electro-absorption Al0.48In0.52As p-i-n Avalanche Photodiodes Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, A. L. Hutchinson; IEEE Electron Device Lett., vol. EDL-5, no. 1, pp. 16-17, January 1984.
Journal Article
Published
1984
"Performance of a Ga0.47In0.53As/Al0.48In0.52As Modulation-Doped Photoconductive Detector," C.Y. Chen, Y.M. Pang, A.Y. Cho, K. Alavi, P.A. Garbinski; Conference on Optical Fiber Communication.  Digest of Technical Papers, pp. 52-53, January 23-25, 1984, New Orleans, LA.
Journal Article
Published
1984
"New Low Dark Current, High Speed Al0.48In0.52As/Ga0.47In0.53As Avalanche Photodiode by Molecular Beam Epitaxy for Long Wavelength Fiber Optic Communications Systems," F. Capasso, B. Kasper, K. Alavi, A.Y. Cho, J.M. Parsey; Appl. Phys. Lett., vol. 44, no. 11, pp. 1027-1029, June 1, 1984.
Journal Article
Published
1984
"Impact Ionization Rates of Electrons and Holes in Al0.48Ga0.52As," F. Capasso, K. Mohammad, K. Alavi, A.Y. Cho, and P.W. Foy; Appl. Phys. Lett., vol. 46, no. 9, pp. 968-970, November 1, 1984.
Journal Article
Published
1983
"Selectively Doped Al0.48In0.52As/Ga0.47In0.53As Heterostructure Field Effect Transistor," T.P. Pearsall, R. Hendel, P. O'Connor, K. Alavi, A.Y. Cho; IEEE Electron Device Lett., vol. EDL-4, no. 1, pp. 5-8, January 1983.  
Journal Article
Published
1983
"Optically Pumped 1.55 µm Double Heterostructure GaxAlyIn1-x-yAs/AluIn1-uAs Lasers Grown by Molecular Beam Epitaxy," K. Alavi, H. Temkin, W.R. Wagner, A.Y. Cho; Appl. Phys. Lett., vol. 42, no. 3, pp. 254-256, February 1, 1983.
Journal Article
Published
1983
"Ga0.47In0.53As/Al0.48In0.52As Multiquantum-Well LEDs Emitting at 1.6 m," K. Alavi, T.P. Pearsall, S. R. Forrest, A.Y. Cho; Electron. Lett. vol. 19, no. 6, pp. 227-229, March 17, 1983.
Journal Article
Published
1983
"1.5-1.6 µm Ga0.47In0.53As/Al0.48In0.52As Multiquantum Well Lasers Grown by Molecular Beam Epitaxy," H. Temkin, K. Alavi, W.R. Wagner, T.P. Pearsall, A.Y. Cho; Appl. Phys. Lett., vol. 42, no. 10, pp. 845-847, May 15, 1983.
Journal Article
Published
1983
"Substrate Rotation-Induced Compositional Oscillation in Molecular Beam Epitaxy (MBE)," K. Alavi, P.M. Petroff, W. R. Wagner, A.Y. Cho; J. Vac. Sci. and Technol. B, vol. 1, no. 2, pp. 146-148, April-June 1983.
Journal Article
Published
1983
"Measurement of the Conduction-Band Discontinuity of Molecular Beam Epitaxial Grown In0.52Al0.48As/In0.53Ga0.47As, N-n Heterojunction by C-V Profiling," R. People, K.W. Wecht, K. Alavi, A.Y. Cho; Appl. Phys. Lett., vol. 43, no. 1, pp. 118-120, July 1, 1983.  
Journal Article
Published
1983
"Ion Implantation of Si and Be in Al0.48In0.52As," A.N.M. Masum Choudhury, W. Rowe, K. Tabatabaie-Alavi, C. G. Fonstad, K. Alavi, A.Y. Cho; J. Appl. Phys., vol. 54, no. 8, pp. 4374-4377, August 1983.
Journal Article
Published
1983
"Modulation-Doped Ga0.47In0.53As/Al0.48In0.52As Planar Photoconductive Detectors for 1.0-1.55-µm Applications," C.Y. Chen, Y.M. Pang, P.A. Garbinski, A.Y. Cho, K. Alavi; Appl. Phys. Lett., vol. 43, no. 3, pp. 308-310, August 1, 1983.
Journal Article
Published
1983
"New Ga0.47In0.53As Sheet-Charge Field-Effect Transistor for Long- Wavelength Optoelectronic Integration," C.Y. Chen, K. Alavi, A.Y. Cho, P.A. Garbinski, Y.M. Pang; Electron. Lett., vol. 19, no. 19, pp. 791- 792, September 15, 1983.
Journal Article
Published
1983
"High-Gain Al0.48In0.52As/Ga0.47In0.53As Vertical N-P-N Heterojunction Bipolar Transistors Grown by Molecular-Beam Epitaxy," R.J. Malik, J.R. Hayes, F. Capasso, K. Alavi, A.Y. Cho; IEEE Electron Device Lett., vol. EDL-4, no. 10, pp. 383-385, October 1983.
Journal Article
Published
1983
"New Long Wavelength Al0.48In0.52As/Ga0.47In0.53As  Avalanche Photodiode Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, C. G. Bethea; Appl. Phys. Lett., vol. 43, no. 11, pp. 1040-1042, December 1, 1983.
Journal Article
Published
1983
"Long Wavelength, Wide Spectral Response (0.8-1.8 ?m) Al0.48In0.52As/Ga0.47In0.53As Avalanche Photodiodes and Al0.48In0.52As Electro-absorption pin Avalanche Detectors Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, C. G. Bethea,  International Electron Devices Meeting (IEDM) Technical Digest, pp. 468-471, December 5-7, 1983, Washington, DC.
Conference Proceeding
Published
1983
"Long Wavelength, Wide Spectral Response (0.8-1.8 μm) Al0.48In0.52As/Ga0.47In0.53As Avalanche Photodiodes and Al0.48In0.52As Electro-absorption pin Avalanche Detectors Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, C. G. Bethea,  International Electron Devices Meeting (IEDM) Technical Digest, pp. 468-471, December 5-7, 1983, Washington, DC.
Conference Proceeding
Published
1982
"In0.53Ga0.47As FETs with Insulator-Assisted Schottky Gates," P. O'Connor, T.P. Pearsall, K. Y. Cheng, A.Y. Cho, J. C. M. Hwang, K. Alavi; IEEE Electron Device Lett., vol. EDL-3, no. 3, pp. 64-66, March 1982.
Journal Article
Published
1982
"Short Channel Ga0.47In0.53As/Al0.48In0.52As Selectively Doped Field Effect Transistors," C.Y. Chen, A. Y. Cho, K. Alavi, P.A. Garbinski; IEEE Electron Device Lett., vol. EDL-3, no. 8, pp. 205-208, August 1982.
Journal Article
Published
1982
"Ion Implanted In0.53Ga0.47As/In0.52Al0.48As Lateral PNP Transistors," K. Tabatabaie-Alavi, A.N.M.M. Choudhury, K. Alavi, J. Vlcek, N. J. Slater, C. G. Fonstad, A.Y. Cho; IEEE Electron Device Lett., vol. EDL-3, no. 12, pp. 379-381, December 1982.
Journal Article
Published
1982
"(In,Ga)As/(In,Al)As Heterojunction Lateral PNP Transistors," K. Tabatabaie-Alavi, A.N.M.M. Choudhury, K. Alavi, J. Vlcek, N. Slater, C. G. Fonstad, A.Y. Cho; International Electron Devices Meeting Technical Digest (IEDM 1982) pp. 766-769, December 13-15, 1982, San Francisco, CA.  Presented by K. Tabatabaie Alavi.  Recipient of Best Student Paper Award.
Conference Proceeding
In-progress
1982
"Ion Implantation Doping of InGaAs and InAlAs," N. J. Slater, A.N.M.M. Choudhury, K. Tabatabaie-Alavi, W. Rowe, C. G. Fonstad, K. Alavi, and A.Y. Cho; Gallium Arsenide and Related Compounds, 1982, pp. 627-634, 1983.  Proceedings of the Tenth International Symposium on Gallium Arsenide and Related Compounds, 19-22 September 1982, Albuquerque NM.
Conference Proceeding
Published
1980
"Interband Magneto-absorption of In0.53Ga0.47As," K. Alavi, R. L. Aggarwal, S. H. Groves; Phys. Rev. B, vol. 21, no. 3, pp. 1311-1315, February 1, 1980.
Journal Article
Published
1979
“Oscillatory Magneto-Transmission of In1-xGaxAsyP1-y Alloys," K. Alavi, R. L. Aggarwal, S. H. Groves; J. Magn. and Magn. Mater. (Netherlands), vol. 11, no. 1-3, pp. 136-138, April 1979.
Journal Article
Published
April 2012 -
March 2015
REU Site: Undergraduate Research Experiences in Sensors and Applications
$338,962
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August 2011
Engineering Sustainable Engineers
$150,000
January 2006 -
January 2011
The University of Texas Multimodal Optical Medical Research Section of AIRC
$2,232,000
Spring 2011
EE 5339 - TOPICS IN ELECTROMAGNETICS
Course Description: This course will introduce the fundamental principles of medical imaging, including the basic concepts of linear system theory, imaging operations, X-ray computed tomography (CT), magnetic resonance imaging (MRI), diffuse optical Ultrasound Imaging, and nuclear medicine imaging. The selected topics cover the physical principles of imaging modalities with the emphasis on how the image is computed.
Last Updated on August 12, 2013, 11:47 am
Spring 2011
EE 4328 - CURRENT TOPICS IN ELECTRICAL ENGINEERING
Course Description: This course will introduce the fundamental principles of medical imaging, including the basic concepts of linear system theory, imaging operations, X-ray computed tomography (CT), magnetic resonance imaging (MRI), diffuse optical Ultrasound Imaging, and nuclear medicine imaging. The selected topics cover the physical principles of imaging modalities with the emphasis on how the image is computed.
Last Updated on August 12, 2013, 11:47 am
Spring 2011
EE 2303 - Electronics I
EE 2303 ELECTRONICS I (3-3) Introduction to semiconductors, carrier statistics, drift and diffusion, semiconductor diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). Circuit applications of diodes. Direct Current (DC) biasing and stability of circuits containing diodes, BJTs, and FETs. Introduction to mid-band single stage small signal analysis of BJT and FET circuits. Laboratory experiments to complement concepts learned in class. Prerequisite: Grade C or better in both EE 2415 and MATH 2326.
Last Updated on August 12, 2013, 11:47 am
Spring 2010
EE 2303 - Electronics I
EE 2303 ELECTRONICS I (3-3) Introduction to semiconductors, carrier statistics, drift and diffusion, semiconductor diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). Circuit applications of diodes. Direct Current (DC) biasing and stability of circuits containing diodes, BJTs, and FETs. Introduction to mid-band single stage small signal analysis of BJT and FET circuits. Laboratory experiments to complement concepts learned in class. Prerequisite: Grade C or better in both EE 2415 and MATH 2326.
Last Updated on August 12, 2013, 11:47 am
December -
OPTO ELECTRONICS RESEARCH GROUP
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